(China (Mainland))
Product Summary
DESCRIPTION:The MDmesh? is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH? horizontal layout. The resulting product has an
outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The 
adoption of the Company’s proprietary strip technique yields overall dynamic performance that is
significantly better than that of similar competition’s products
Parametrics
Absolute Maximum ratings
VGS Gate- source Voltage ± 30 V
ID Drain Current (continuous) at TC = 25°C 12 12 (*) A
ID Drain Current (continuous) at TC = 100°C 7.5 7.5 (*) A
IDM Drain Current (pulsed) 48 48 (*) A
PTOT Total Dissipation at TC = 25°C 160 35 W
Derating Factor 1.28 0.28 W/°C
VISO Insulation Winthstand Voltage (DC) -- 2500 V
dv/dt (1) Peak Diode Recovery voltage slope 15 V/ns
Tj Operating Junction Temperature -65 to 150°C
Tstg Storage Temperature -65 to 150°C
Features
(1) TYPICAL RDS(on) = 0.30 Ω;
(2) HIGH dv/dt AND AVALANCHE CAPABILITIES;
(3) LOW INPUT CAPACITANCE AND GATE CHARGE;
(4) 100% AVALANCHE TESTED;
(5) LOW GATE INPUT RESISTANCE ;
(6) TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 STP12NM50 |
STMicroelectronics |
MOSFET N-Ch 500 Volt 12 Amp |
Data Sheet |
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STP12NM50FD |
STMicroelectronics |
MOSFET N-Ch 500 Volt 12 Amp |
Data Sheet |
Negotiable |
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STP12NM50FP |
STMicroelectronics |
MOSFET N-Ch 500 Volt 12 Amp |
Data Sheet |
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STP12NM50N |
STMicroelectronics |
MOSFET N-Ch 550 V 0.30 Ohm 12 A MDmesh |
Data Sheet |
Negotiable |
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STP12NM50FDFP |
STMicroelectronics |
MOSFET N-Ch 500 Volt 12 Amp |
Data Sheet |
Negotiable |
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