(China (Mainland))
Product Summary
DESCRIPTION:The PowerMESH?II is the evolution of the first generation of MESH OVERLAY?. The layout refinements introduced greatly improve the Ron*area
figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness
Parametrics
ABSOLUTE MAXIMUM RATINGS
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 600 V
VGS Gate- source Voltage ±30 V
ID Drain Current (continuos) at TC = 25°C 4.2 4.2(*) A
ID Drain Current (continuos) at TC = 100°C 2.6 2.6(*) A
IDM ( ) Drain Current (pulsed) 16.8 16.8(*) A
PTOT Total Dissipation at TC = 25°C 100 35 W
Derating Factor 0.8 0.28 W/°C
dv/dt(1) Peak Diode Recovery voltage slope 3.5 3.5 V/ns
VISO Insulation Withstand Voltage (DC) - 2500 V
Tstg Storage Temperature–65 to 150℃
Tj Max. Operating Junction Temperatur –65 to 150℃
Features
(1) TYPICAL RDS(on) = 1.8Ω;
(2) EXTREMELY HIGH dv/dt CAPABILITY;
(3) 100% AVALANCHE TESTED;
(4) NEW HIGH VOLTAGE BENCHMARK;
(5) GATE CHARGE MINIMIZED
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 STP4NC60 |
STMicroelectronics |
MOSFET N-Ch 600 Volt 4 Amp |
Data Sheet |
Negotiable |
|
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|
STP4NC60A |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
STP4NC60AFP |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
STP4NC60FP |
Other |
|
Data Sheet |
Negotiable |
|
||||
