(China (Mainland))
Product Summary
APPLICATIONS: Isolated DC/DC Converters
FEATURES
(1) TrenchFET Power MOSFET;
(2) 175 °C Junction Temperature;
(3) Low Thermal Resistance Package;
(4) 100 % Rg Tested
Parametrics
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Drain-Source Voltage VDS 200 V
Gate-Source Voltage VGS ± 20 V
Continuous Drain Current (TJ = 175 °C)TC = 25 °C ID 65a A
Continuous Drain Current (TJ = 175 °C)TC = 125 °C ID 37a A
Pulsed Drain Current IDM 140 A
Avalanche Current L = 0.1 mH IAS 35 A
Single Pulse Avalanche Energy b L = 0.1 mH EAS 61 mJ
Maximum Power Dissipation b TC = 25 °C PD 375c W
Maximum Power Dissipation b TA = 25 °Cd PD 3.75 W
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175℃
Features
FEATURES
(1) TrenchFET Power MOSFET;
(2) 175 °C Junction Temperature;
(3) Low Thermal Resistance Package;
(4) 100 % Rg Tested
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 SUM65N20-30-E3 |
Vishay/Siliconix |
MOSFET 200V 65A 375W 30mohm @ 10V |
Data Sheet |
|
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
|
SUM60N04-05LT-E3 |
Vishay/Siliconix |
MOSFET 40V 60A 200W w/Sensing Diode |
Data Sheet |
Negotiable |
|
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|
SUM60N04-12LT |
Vishay/Siliconix |
MOSFET 40V 60A 110W |
Data Sheet |
Negotiable |
|
||||||||||||
|
SUM60N10-17-E3 |
Vishay/Siliconix |
MOSFET 100V 60A 150W |
Data Sheet |
|
|
||||||||||||
|
SUM65N20-30-E3 |
Vishay/Siliconix |
MOSFET 200V 65A 375W 30mohm @ 10V |
Data Sheet |
|
|
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 |
SUM65N20-30 |
Other |
|
Data Sheet |
Negotiable |
|
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|
SUM60P05-11LT-E3 |
Vishay/Siliconix |
MOSFET 55V 60A 200W |
Data Sheet |
Negotiable |
|
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