Product Summary

APPLICATIONS: Isolated DC/DC Converters

FEATURES
(1)  TrenchFET Power MOSFET; 
(2)  175 °C Junction Temperature; 
(3)  Low Thermal Resistance Package; 
(4)  100 % Rg Tested

Parametrics

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Drain-Source Voltage  VDS 200 V
Gate-Source Voltage  VGS ± 20 V
Continuous Drain Current (TJ = 175 °C)TC = 25 °C ID 65a A
Continuous Drain Current (TJ = 175 °C)TC = 125 °C ID 37a A
Pulsed Drain Current IDM 140 A
Avalanche Current L = 0.1 mH IAS 35 A
Single Pulse Avalanche Energy b L = 0.1 mH  EAS 61 mJ
Maximum Power Dissipation b TC = 25 °C PD 375c W
Maximum Power Dissipation b TA = 25 °Cd PD 3.75 W
Operating Junction and Storage Temperature Range  TJ, Tstg - 55 to 175℃

Features

FEATURES
(1)  TrenchFET Power MOSFET; 
(2)  175 °C Junction Temperature; 
(3)  Low Thermal Resistance Package; 
(4)  100 % Rg Tested

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SUM65N20-30-E3
SUM65N20-30-E3
Vishay/Siliconix
MOSFET 200V 65A 375W 30mohm @ 10V
Data Sheet
0-1: $2.35
1-25: $1.91
25-50: $1.80
50-100: $1.72
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SUM60N02-3m9P
SUM60N02-3m9P
Other

Data Sheet
Negotiable 
SUM60N02-3M9P-E3
SUM60N02-3M9P-E3
Vishay/Siliconix
MOSFET 20V 60A 120W 3.9mohm @ 10V
Data Sheet
0-295: $1.94
295-400: $1.52
400-800: $1.45
800-1600: $1.36
SUM60N04-05LT
SUM60N04-05LT
Vishay/Siliconix
MOSFET 40V 60A 200W w/Sensing Diode
Data Sheet
Negotiable 
SUM60N04-05LT-E3
SUM60N04-05LT-E3
Vishay/Siliconix
MOSFET 40V 60A 200W w/Sensing Diode
Data Sheet
Negotiable 
SUM60N04-05T-E3
SUM60N04-05T-E3
Vishay/Siliconix
MOSFET 40V 60A 200W w/Sensing Diode
Data Sheet
0-265: $2.72
265-400: $1.55
400-800: $1.28
800-1600: $1.13
SUM60N04-06T-E3
SUM60N04-06T-E3
Vishay/Siliconix
MOSFET 40V 60A 200W w/Sensing Diode
Data Sheet
0-265: $2.43
265-400: $1.39
400-800: $1.15
800-1600: $1.01